Abstract
Low temperature electrical transport properties of boron-doped zinc oxide thin films prepared by metal-organic chemical vapor deposition technique were investigated. The temperature coefficient of resistivities is negative at low temperatures and becomes positive at relatively high temperatures. The magnetic field dependence of resistivity was measured at different temperatures from 2to30K. The samples exhibit negative magnetoresistivity at all measuring temperatures and the absolute values of the negative magnetoresistivities systematically increase with decreasing temperature at a given magnetic field. Weak-localization effect and two-band model were used to analyze the experimental results. Least-squares fits showed that the data can be well described by the theory. The inelastic scattering time is proportional to T−3∕2, suggesting that the electron-electron scattering is the dominant coherent backscattering breaker.
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