Abstract
AbstractThis work reports on Differential Scanning Calorimetry (DSC) measurements performed on Ti‐Al metallic layers stacks deposited on n+‐GaN. The aim is to get better understanding of the mechanisms leading to ohmic contact formation during the annealing stage. Two exothermic peaks were found, one below 500 °C and the other one around 660 °C. They can be respectively attributed to Al3Ti and Al2Ti compounds formation. The locations of these peaks provide clear evidence of solid‐solid reactions. Lowest contact resistance is well correlated with the presence of Al3Ti compound, corresponding to Al(200nm)/Ti(50nm) stoichiometric ratio. Subsequently, Al(200 nm)Ti(50 nm) stacks on n+‐GaN were annealed from 400 °C to 650 °C. Specific Contact Resistivity (SCR) values stay in the mid 10‐5 Ω.cm² range for annealing temperatures between 450 °C and 650 °C. Such low‐temperature annealed contacts on n+‐GaN may open new device processing routes, simpler and cheaper, in which Ohmic and Schottky contacts are annealed together. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
