Abstract
Well-crystallized tin oxide films were successfully synthesized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power and hydrogen flow rate. The substrate temperature was increased only up to 423–453 K by plasma heating, which suggests that the formation of the SnO 2 crystals was not caused by plasma heating, but by enhanced reactivity of precursors in high density plasma. The micro-hardness of deposited tin oxide films ranged from 5.5 to 11 GPa at different hydrogen flow rates.
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