Abstract
Thin film encapsulation (TFE) was an efficient way to guarantee the reliability of organic light emitting diodes (OLEDs). To passivate the moisture penetration, the TFE barriers should have low water vapor transmission rate (WVTR). In this study, high quality SiON barrier with good passivability was achieved by adjusting the deposition pressure and power of plasma‐enhanced chemical vapor deposition (PECVD). We successfully achieve a SiON film with few dangling bonds and defects, which showed a WVTR of 1.07×10−4 gm−2d−1 at the thickness of 750 nm.
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