Abstract
Thin metal films are of considerable interest for optoelectronic device fabrication. The high resistivity of thin metal films results in drawbacks of their application in the devices. The low Schottky barrier height for certain important material such as InGaAs blocks its application in optoelectronic device at long wavelength. Recent studies have been conducted in low temperature (LT) deposition of thin metal films. The LT thin films showed 4–5 orders lower resistivity compared to those formed at room temperature. The LT process also results in increased Schottky barrier height for most III–V semiconductor materials. Therefore, the LT processed thin films show superior properties for optoelectronic devices applications. In this work, computer simulation was conducted by partially implementing the LT results in device parameters. The optimum design for the high performance metal–semiconductor–metal photodetector was obtained by simulation. The results show that the LT processing is of convenient, cost-effective, and could be implemented in more optoelectronic device fabrications.
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