Abstract
The ferroelectric switchable diode induced resistive switching behavior at low temperature has been investigated in the epitaxial BiFeO3 (BFO) thin films. The switchable diode can be tuned using a higher voltage at low temperatures. The diode barrier is determined to be ∼0.55 eV at the interface between BFO and electrode. The resistive switchable barrier with respect to the ferroelectric domain switching has been systematically characterized at various low temperatures. The temperature dependent conduction and leakage mechanisms have also been identified. These results can advance our understanding of resistive switching based on ferroelectric switchable diode at low working temperatures and potentially extend the applications of memristor to a larger temperature scale.
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