Low Temperature CVD of Pb ( Zr , Ti ) O 3 Using Pb ( tmhd ) 2 , Zr ( dmae ) 4 , and Ti ( dmae ) 4

Abstract

(PZT) thin films were deposited at low temperatures by direct liquid injection metallorganic chemical vapor deposition (MOCVD) process using Pb 2,2,6,6,-tetramethyl 3,5-heptanedionate Zr dimethyl aminoethoxide and and were found to be less sensitive to moisture and air but their dissociation temperature was about the same as alkoxides. Two separate solution of and of and were used and the growth rate of PZT films was around 11 nm/min at substrate temperatures of 380-440°C. Because decomposition temperatures of and are in the same range, control of the film composition was comparatively easy. PZT films deposited below 450°C had negligible carbon and nitrogen content. Pure perovskite PZT films were obtained at temperatures as low as 440°C on substrate and 425°C on substrate, respectively. The remanant polarization of PZT films prepared at 425°C on substrate was and the leakage current density at 100 kV/cm was less than © 2003 The Electrochemical Society. All rights reserved.