Abstract
The properties of LaO x thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaO x thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 X 10 - 3 A/cm 2 at -1 V. respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaO x thin film deposited using 50 seem oxygen gas flow rate are better than the properties of the other LaO thin films deposited using 30 or 100 sccm Oxygen gas flow rate.
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