Abstract
The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400°C for 2h in an oxygen atmosphere. BZN films crystallized with an energy density of 27mJ∕cm2 at a substrate temperature of 400°C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ⩽400°C makes integration with polymeric substrates possible.
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