Abstract
Polycrystalline anatase TiO2 films have been successfully deposited on Si(100) substrates at a temperature of 250 °C at growth rates of higher than 10 Å/s by atmospheric chemical vapor deposition with titanium tetraisopropooxide as a precursor and H2O2 vapor as an oxidant. The H2O2 vapor enhances the crystallization of the TiO2 amorphous network in the grown films. We also show that TiO2 film obtained by low-temperature deposition with the H2O2 vapor exhibits a photocatalytic activity for the naturally adsorbed carbon impurity on its surface, indicating the applicability of the present technique to the field of photocatalyst coating. The present technique is also applicable to the deposition of anatase TiO2 films on flexible polyimide tapes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
