Abstract
Manifestations of electron resonance scattering by donor impurities in the low-temperature conductivity of semiconductors are investigated in the case when the donor resonance energy level of the impurities lies in the conduction band. It is shown that the application of resonance scattering theory in the framework of the Friedel approach can explain the stabilization of the electron density, the maximum of the electron mobility, and the minimum of the Dingle temperature as a function of the concentration of donor impurities and also the anomalous temperature dependence of the mobility due to the resonance. New experimental data are obtained on the concentration, mobility, and Dingle temperature of electrons in mercury selenide crystals containing iron impurities, and it is found that these new results, like those known previously, are in complete agreement with the behavior predicted in the proposed approach. The relation of this approach to the previous interpretation of the concentration maximum of the mobility is discussed, and arguments for its applicability are presented.
Published Version
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