Abstract
Silicon wafers have been implanted with antimony ions and argon ions. Electrical activity profiles after a low temperature annealing (650°C, 30 min, N 2) are discussed. These profiles have been obtained by the Spreading-Resistance method on bevelled samples. We assume a depth resolution down to one hundred ångströms due to coating of the sample with a deposited oxide before bevelling which gives a very well defined angle. The principal observed features are: • - A tail in the antimony profile due to channeling for single implantation. • - No occurence of the Sb tail for double implantation when the inert gas is implanted first. The effect of defects and of the presence of argon on the electrical activity of the Sb implanted sample have been studied as a function of the argon doses, the implantation energies of the two species, and the order of the two implantations.
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