Abstract
CuInSe 2 and CuIn 0.95Ga 0.05Se 2 single crystals, grown by vertical Bridgman, were annealed in air at temperatures from 100 to 160 °C. Both CuInSe 2 and CuIn 0.95Ga 0.05Se 2 samples were studied using photoluminescence (PL). The CuInSe 2 samples were also studied using Rutherford Backscattering Channeling (RBS/C) and nuclear reaction analysis (NRA). Before annealing the samples showed low dechanneling parameters suggesting high quality lattice structure. The PL spectra of both CuInSe 2 and CuIn 0.95Ga 0.05Se 2 revealed bands associated with band-tail recombination mechanism. Annealing at 120 °C and higher temperatures considerably modified the RBS/C and PL spectra. NRA indicated a gradual increase in the oxygen content. PL analysis suggested that annealing increases both the mean-square amplitude of potential fluctuations and the level of compensation. Changes in the RBS/C spectra demonstrated that annealing at up to 160 °C does not result in the growth of In 2O 3 surface layer but modifies primarily the Se- and Cu-related RBS/C yield. These modifications are consistent with an increase in the concentration of defect complexes.
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