Abstract
This paper reports the results of preliminary single event effects (SEE) testing of the Intersil ISL70040SEH, a single low side driver specifically designed to drive enhancement mode power GaN FETs.
Highlights
Wide band gap semiconductor devices such as GaN and SiC have been gaining interest in power management for space applications
In this paper we report results of destructive and non-destructive single event effects (SEE) testing of the ISL70040SEH, a low side GaN FET driver designed for space applications, together with a brief discussion of the part’s electrical specifications and how the device solves many of the problems associated with using GaN FETs in power management space applications
Single-event transient (SET) response has emerged as a key issue in power management parts, and this paper will concentrate on ISL70040SEH SEE results
Summary
Wide band gap semiconductor devices such as GaN and SiC have been gaining interest in power management for space applications. These devices feature higher breakdown voltage, lower RDS(ON), and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a small solution footprint. There is an added benefit, especially from GaN devices, that make these attractive to the space market. In this paper we report results of destructive and non-destructive SEE testing of the ISL70040SEH, a low side GaN FET driver designed for space applications, together with a brief discussion of the part’s electrical specifications and how the device solves many of the problems associated with using GaN FETs in power management space applications
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