Abstract

Jet Propulsion Laboratory (JPL) and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data (previous sets were reported in contribution IEEE Trans. on Nuclear Sci. in December 1985, 1987, and 1989). Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given. >

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