Abstract
Abstract Recent progress has been made in the production of low-roughness Chemical Vapor Deposition (CVD) diamond films at temperatures less than 600°C. These films are particularly suitable for cutting tool applications. Such progress was achieved by simultaneously promoting the renucleation process and controlling the growth process at low temperatures. In this paper, we show that below 700°C (unlike what is usually observed at temperatures in the range of 750–900°C), secondary nucleation does not occur easily even on (111) faces. This makes the growth of low roughness films difficult. We also report on the role of a thin gold layer deposited on top of a diamond film in favoring smoother film formation. This observation was seen to be due to the ability of the thin gold layer in promoting renucleation. Furthermore, the effect of the percentage of methane introduced in the feed gas was studied.
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