Abstract
Abstract This study investigated the electrical resistivities and thermal stabilities of Cu/(Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 /Si structure and Cu((Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 )/Si alloy films. The films were prepared by magnetron sputtering using a (Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 target and a Cu target. The as-deposited (Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 film is amorphous, and the film remains its noncrystallinity up to a temperature of 500 °C. Diffusion barrier characteristics showed that the sandwiched Cu/(Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 /Si film, in which the (Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 film was deposited under a substrate bias of −200 V, had a failure temperature of 575 °C. Barrierless Cu 0.793 ((Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 ) 0.207 /Si alloy film had the lowest resistivity of 2.7 μΩ cm when the film was annealed at 600 °C, and Cu 0.699 ((Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 ) 0.301 /Si alloy film had the highest failure temperature of at least 750 °C. The low resistive Cu((Fe 0.55 Co 0.45 ) 90 B 6 Ti 2 Nb 2 ) alloy film is promising to be used as a barrierless Cu interconnects.
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