Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs

Abstract

Highly transparent and low-resistive multilayered gate electrodes, MoO3/indium–tin oxide (ITO)/Ag/ZnS (MIAZ) playing as the high-work-function layer, the nonreactive interface layer, the lateral conduction layer, and the index-matching layer, respectively, have been investigated for the application to the transparent oxide thin-film transistors (TFTs). The transmittance of the optimized MIAZ electrode is 92.46% and the sheet resistance is $7.77~\Omega / \Box $ . The top gate InGaZnO TFT with this gate electrode shows the mobility of 11.57 cm2/( $\text {V}\cdot ~\text {s}$ ) and positive $V_{\text {th}}$ of 0.210 V compared with that with single ITO gate electrode of which $V_{\text {th}}$ is −0.086 V.