Low resistance, unannealed, Ohmic contacts to p-type In[sub 0.27]Ga[sub 0.73]Sb

Abstract

Unannealed Pd∕Pt∕Au contacts to p-type In0.27Ga0.73Sb were fabricated and measured. Relatively high hole mobilities, with respect to similarly doped InP-lattice-matched materials, and associated low sheet resistances were measured for the p-type In0.27Ga0.73Sb material. The unannealed Pd∕Pt∕Au contacts were found to be Ohmic in nature; and for a hole density of 2.9×1019cm−3 and a mobility of 160cm2∕Vs, a specific contact resistance of 7.6×10−8Ωcm2 was measured.