Abstract
We have developed an ohmic metalization method to n-GaN through which low contact resistances down to 3 × 10 −6 Ω cm 2 have been achieved. The process consists of: depositing a 200 Å thin layer Ti; annealing at 975°C for 30 s, realigning and depositing another 200 Å thin layer of Ti, followed by a 2000 Å overlayer of Au. The high temperature annealing effect on bulk GaN has been investigated. No degradation of semiconductor bulk properties was found up to 1050°C. TiN formation is believed to be the key to the low contact resistance.
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