Abstract
A low-resistivity thermally stable TiSi2 shallow junction applicable to a deep submicron contact has been developed. This was achieved through the use of an advanced 2-step rapid thermal silicidation called the “AAS” process and the use of an Al-based metal/TiN/Ti/TiSi2 contact technique. The low sheet resistance and high thermal stability of TiSi2 film on n+-Si reached the same levels as those on undoped Si, though the silicidation on n+-Si is more difficult than that on p+ or undoped Si. The film and contact resistivities were about 11.5 µΩ cm and 1∼2×10-8 Ω cm2, respectively. Ring oscillators utilizing these processes exhibited a 15% improvement in speed as compared with conventional cases [without self-aligned silicide (SALICIDE)].
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