Abstract
3kV UMOSFET with buried p-base regions was developed to realize the low on-resistance with low electric field in the gate oxide for off-state. The buried p-base region was formed simultaneously with the p-base region by utilizing MeV ion implantation. Influence by the structural parameter such as cell geometry and space between the buried p-base region and the trench gate was investigated. The hexagonal cell with high channel density exhibits an extremely low on-resistance of 6.8 mΩcm2 with threshold voltage of 5.0 V at room temperature.
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