Low-pressure MOCVD growth of p-type ZnO thin films by using NO as the dopant source

Abstract

Nitrogen-doped p-type zinc oxide thin films have been deposited on glass substrates by metalorganic chemical vapor deposition. Diethylzinc was used as zinc precursor. Both NO and N 2O were used as oxygen source, and NO was also used as N dopant source. Native defects (e.g. Zn i and V O) were reduced by using N 2O. Second-ion mass spectroscopy demonstrates that N was doped into the thin films. Hall measurement shows that the lowest resistivity and hole concentration are 3.02 Ω cm and 1.97×10 18/cm 3, respectively.