Abstract
AbstractThis work presents the design of a wideband two stage SiGe HBT LNA meant for a fully integrated RF front end millimeter-wave receiver covering 57 GHz to 64 GHz license free band. A cascode amplifier utilizing active and passive matching along with negative feedback is employed in the two-stage design of the LNA. The designed LNA exhibits 17 mW of power consumption, 20.2 dB gain, 3.7 dB noise figure, and 1-dB compression point (P1 dB) of −0.8 dBm all achieved simultaneously in the desired band. The LNA is realized in the 0.13\(\mu \)m SiGe BiCMOS technology node. In addition to that, the proposed LNA exhibits the 3-dB gain bandwidth of more than 21 GHz. A novel layout technique is used to reduce unnecessary parasitics so that the EM simulated response agrees well with the schematic response. Apart from that, a new figure of merit is proposed to fairly compare the performance of the proposed LNA with the state-of-the-art LNA operating around 60 GHz license free band. The designed LNA will form the RF front end of a battery-operated mm-wave receiver.KeywordsCascodeFigure of Merit (FOM)Heterojunction Bipolar Transistor (HBT)Low Noise Amplifier (LNA)Millimeter WaveSilicon Germanium (SiGe)
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