Abstract
This paper presents a 28GHz low noise amplifier (LNA) implemented in 22nm FDSOI technology. The LNA is based on inductively degenerated common source topology with cascode device. With several special layout techniques, the LNA achieved best in class noise figure (NF). At 28GHz, the LNA has a gain of 12dB, input referred third-order intercept point (IIP3) of 3.0dBm and input reference 1-dB compression point (IP1dB) of - 7.6dBm. The 1-dB and 3-dB bandwidth of the LNA is 8.5GHz and 15.1GHz, respectively. The lowest achieved NF is 1.46dB at 24GHz with power dissipation (PDC) of 9.8mW. Another LNA with larger device width was also implemented to achieve better NF. For this LNA, the lowest achieved NF is 1.35dB at 24GHz with PDC of 13.0mW. It could also achieve 1.8dB NF at 28GHz at 5.0mW PDC.
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