Abstract
AbstractThe design and measurement results of 3–5 GHz fully integrated ultra‐wideband (UWB) CMOS LNA are presented. To boost the transconductance of the LNA and to reduce circuit area effectively, we eliminate a source degeneration inductor using resistive‐feedback cascode structure. The implemented UWB LNA shows peak gain of 10.8 dB, more than 10 dB of input return loss, and a noise figure of 3.3–4.2 dB from 3 to 5.1 GHz with power dissipation of 14 mW. The input P1dB and input IP3 (IIP3) at 4 GHz are about −6 dBm and +4 dBm, respectively. For low cost, the LNA has been fabricated using a 0.18‐μm thin metal CMOS process with top metal thickness of 0.84 μm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 494–496, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24104
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
