0.18 [micro sign]m 3–6 GHz CMOS broadband LNA for UWB radio

Abstract

A 3–6 GHz CMOS broadband low noise amplifier (LNA) for ultra-wideband (UWB) radio is presented. The LNA is fabricated with the 0.18 µm 1P6M standard CMOS process. Measurement of the CMOS LNA is performed using an FR-4 PCB test fixture. From 3 to 6 GHz, the broadband LNA exhibits a noise figure of 4.7–6.7 dB, a gain of 13–16 dB, and an input/output return loss higher than 12/10 dB, respectively. The input P1 dB and input IP3 (IIP3) at 4.5 GHz are about −14 and −5 dBm, respectively. The DC supply is 1.8 V.