Low power schmitt trigger based sram using 32nm finfet devices

Abstract

In this work we propose a novel Schmitt Trigger FinFET SRAM cell. The proposed SRAM cell is focused on high noise immunity and low static leakage, the cell uses two modified Schmitt Trigger based inverters in cross coupled manner. Use of Schmitt Trigger in place of inverters improves noise margin and read performance of the cell. The proposed cell uses FinFET devices in shorted gate and independent gate modes, helping in achieving low static leakage. The proposed SRAM cell shows considerable improvement in performance in terms of SNM, static power consumption and read/write delays due to its modified structure.