Abstract
A metal-oxide-semiconductor structure with NiSi2 nanocrystals embedded in the SiO2 layer has been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
