Abstract

This paper presents low power, high gain, low-noise amplifiers (LNA) at Ku- and Ka-band frequencies in a $0.13\mu\text{m}$ SiGe:C BiCMOS technology. The designed LNAs fulfill the RF performance requirements of active phased-array antennas fi satellite communications or 5G applications while consuming le than 6 mW of power. The Ku-band LNA exhibits a peak gain 28 dB with a 3-dB bandwidth (BW) of 3.6 GHz (9.2-12.8 GHz), noise Figure (NF) of <1.9dB and IPldB of −30dBm. The Ka-bai LNA bandwidth extends between 18-21.1 GHz while providing 26 dB of peak gain with a noise Figure of <2.3dB and IPldB of −30dBm. Among published LNAs in Silicon technologies, the designed LNAs demonstrate the best Figure of merit, considering noise, gain, linearity, and consumed power.

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