Low-power high-mobility organic single-crystal field-effect transistor

Abstract

Evolving flexible electronics requires the development of high-mobility and low-power organic field-effect transistors (OFETs) that are crucial for emerging displays, sensors, and label technologies. Among diverse materials, polymer gate dielectrics and two-dimensional (2D) organic crystals have intrinsic flexibility and natural compatibility with each other for OFETs with high performance; however, their combination lacks non-impurity and non-damage construction strategies. In this study, we developed a desirable OFET system using damage-free transfer of 2D organic single crystal, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene on a unique polymer dielectric layer, poly(amic acid) (PAA). Benefiting from the unique PAA surface nanostructure and the long-range ordered characteristics of the 2D organic single crystal, the resulting OFETs show remarkable performance with high mobility and low operating voltage of 18.7 cm2 V−1 s−1 and −3 V, respectively. The result indicates that combining polymer gate dielectric with 2D organic single crystal using a high-quality method can produce flexible electronic devices with high performance.