An improved process for fabricating high-mobility organic molecular crystal field-effect transistors

Abstract

In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to use a silanized Si wafer for curing the stamps and to handle a fragile micron thickness polydimethylsiloxane (PDMS) insulating film and laminate it, bubble-free, against the PDMS transistor stamp. We find that despite the altered design, rougher PDMS surface, and lamination and measurement of the device in air, we still achieve electrical mobilities of the order of 10cm2∕Vs, comparable to the current state of the art in organic FETs. Our device shows hole conduction with a threshold voltage of the order of −9V, which corresponds to a trap density of 1.4×1010cm−2.