Abstract

In deep-submicrometer cmos processes, time-domain resolution of a digital signal is becoming higher than voltage resolution of analog signals. This claim is nowadays pushing toward a new circuit design paradigm in which the traditional analog signal processing is expected to be progressively substituted by the processing of times in the digital domain. Within this novel paradigm, digitally controlled delay lines (DCDL) should play the role of digital-to-analog converters in traditional, analog-intensive, circuits. Digital delay locked loops are highly prevalent in integrated systems. The proposed paper addresses the glitches present in delay circuits along with area, power dissipation and signal integrity. The digitally controlled delay lines(DCDL) under study have been designed in a 90 nm CMOS technology 6 layer metal Copper Strained SiGe Low K Dielectric. Simulation and synthesis results show that the novel circuits exhibit no glitches for dual output coarse DCDL with less power dissipation and consumes less area compared to the glitch free NAND based DCDL. The most design intensive component of the DLL is the Digitally Controlled Delay Line (DCDL). A DCDL is acombinational circuit that delays its input by an open loopvalue that typically has a monotonic relationship with thedigital setting input. Such delay value is not preciselydefined and is subject to process, voltage, and temperatureconditions. The average modern microprocessor containsmultiple digital delay locked loops embedded in varioussubsystems. The vast majority of DCDLs in DLLapplications are related to clocking and can also be used inabsolute measurement of unknown delays (time to digital conversion)

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