Abstract

AbstractThis article presents a low‐power fully‐differential 3.5‐GHz wideband complementary metal oxide semiconductor (CMOS) low‐noise amplifier (LNA) based on the LC‐ladder match network approach. To have low power consumption and high power gain, two common‐source stages are cascaded for reusing the bias current. To have wideband low noise figure, the gate width of the input transistor is determined from the wideband optimization of noise contribution. The implemented 0.18‐μm CMOS differential LNA achieves a power gain of 12 dB, a minimum noise figure of 3.0 dB, an input‐referred third‐order intercept point of −3.2 dBm, and a 3‐dB bandwidth of 2.5–4.5 GHz, while consuming 12.9 mW. Compared with the other wideband differential LNAs tailored for the same frequency range, a very high figure‐of‐merit of 0.36 is achieved. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1196–1198, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23321

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.