Abstract
This project is about the development of n-type ISFET using silicon nitride (Si3N4) as a sensing membrane for pH measurement in biomedical applications. The theory, design, and fabrication methods, along with the experimental results are presented in this report. The gate of the ISFET is replaced by the Si3N4 sensing membrane layer that has been deposited using PECVD system to cover the gate area. Both exposed membrane of ISFET and reference electrode were immersed in pH buffer solution to measured electrical IDVD (drain current-drain voltage) and IDVG (drain current-gate voltage) characteristic in order to identify the ISFET behavior. The best pH sensitivity achieved from the experimental testing is 40.35 mV/pH.
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