Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit

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This letter presents guidelines for the design of low phase noise oscillators in GaN high electron mobility transistor (HEMT) technology. The design starts from bias-dependent low-frequency (LF) noise measurements. Oscillator topology and bias point are then chosen for operation in regions where LF noise is low. The best LF noise properties are obtained for low drain voltage and current. Thus, the low phase noise can be achieved at low dc power which also means that power normalized phase noise figure of merit (FOM) will be good.