Abstract
For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 /spl mu/m CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 /spl mu/m. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7 dBc/Hz at 1 MHz offset frequency from oscillation frequency of 13 GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.
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