Abstract
Novel low permittivity LaAlGe2O7 ceramics was prepared by a solid-state reaction method, and the relationship between microstructure and microwave properties was revealed. XRD and Rietveld refinement confirmed that the crystal structure of LaAlGe2O7 is monoclinic P21/c space group. Raman spectroscopy reflects the trend of internal structural order and phonon-damping behavior of LaAlGe2O7 ceramics. The ceramic sintered at 1250 °C exhibited the best surface morphology and optimum microwave dielectric properties of εr = 9.22, Q × f = 33417 GHz, τf = −71.68 ppm/°C. The lattice energy and packing fraction are used to explain the change of Q × f value. The relationship between phonon damping behavior and microwave dielectric properties was revealed. The temperature stability was studied by bond valence. The LaAlGe2O7 ceramics is a strong candidate for the substrate material of millimeter wave communication.
Published Version
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