Abstract
Pentacene-based organic thin-film transistors (TFTs) with solution-processed barium zirconate titanate as gate dielectrics are studied. The fabricated TFTs show a high field-effect mobility of 7.31 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> · V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> · s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> at a V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> of -3.6 V, a low threshold voltage of -1.60 V, and a low subthreshold slope swing of 162 mV/dec. Moreover, organic inverters with enhancement-mode load and driver are also investigated. The inverters demonstrate a high gain of 9.98, a low operating voltage of -5 V, and a low power dissipation of 1.14 μW. Very good agreements between simulation and experimental results are achieved.
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