Abstract
Minimization of operating bias and generation–recombination dark current in long wavelength infrared (LWIR) strained layer superlattice (SLS) detectors, consisting of a lightly doped p-type absorber layer and a wide band gap hole barrier, are investigated with respect to the band alignment between the wide band gap barrier and absorber layers. Dark current vs. bias, photoresponse, quantum efficiency, lifetime, and modeling are used to correlate device performance with the wide gap barrier composition. Decreases in dark current density and operating bias were observed as the conduction band of the wide gap barrier was lowered with respect to the absorber layer. The device achieved 95% of its maximum quantum efficiency at 0V bias, and 100% by 0.05V. This study demonstrates key device design parameters responsible for optimal performance of heterojunction based SLS LWIR detectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.