Abstract

Quality factor tuning is attractive in degenerate (DE) and nondegenerate (NDE) MEMS gyros for drift suppression or shock and vibration immunity. This paper proposes three resistance-based Q-factor tuning approaches without dedicated electrodes for NDE gyro. The inherent sensing capacitance is utilized as a Q-tuning mechanism for low C-SWaP (cost, size, weight, and power). Routing traces on MEMS or ASIC chips as well as the input impedance of charge-sensitive-amplifier (CSA) are utilized as damping sources, respectively. The theoretical and experimental results indicate Q-tuning utilizing the CSA's input impedance doesn't deteriorate the gyro's noise floor (ARW = 0.01°/√h, BI = 0.12°/h). Large-scale Q-tuning using the regulation of polarization voltage reduces the sensing Q-factor from 38k to 3k. The gyro's settling time after shock is also reduced from 1.4s to 0.13s after Q-tuning. Besides, a frequency-independent fine Q-tuning using tail current regulation in Opam is proposed to correct the thermal variation of the sensing Q-factor. It improves the gyro's bias drift from 1.5°/s to 0.2°/s. This work presents a low C-SWaP Q-tuning solution for high-end industrial MEMS gyro.

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