Abstract
In this letter, a tunable protection switch device using open stubs for $X$ -band low-noise amplifiers (LNAs) is proposed. The protection switch is implemented using p-i-n diodes. As the parasitic inductance in the p-i-n diodes may degrade the protection performance, tunable open stubs are attached to these diodes to obtain a grounding effect. The performance is optimized for the desired frequency band by adjusting the lengths of the microstrip line open stubs. The designed LNA protection switch is fabricated and measured, and sufficient isolation is obtained for a 200 MHz operating band. The proposed protection switch is suitable for solid-state power amplifier radars in which the LNAs need to be protected from relatively long pulses.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
