Low Melting Point Phosphor-In-Glass (PiG) Realizing at a Normal Atmosphere and Packaged Performance with GaN LED

Abstract

In this study, a low-temperature normal atmosphere phosphor composite manufacturing technique based on the Sn-P-F-O glass system is proposed to solve the phosphor silicon difficulties of easy aging, low color rendering, oxygen and heat stability. To prepare ((BaSr)2SiO4:Eu2+) Green and (CaAlSiN3:Eu2+) Red phosphor in glass (PiG), the Sn-P-F-O glass precursor was sintered for 1 hour at 800 °C, then mixed with G/R phosphors. X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL) were used to investigate the crystal phase, microstructure, excitation and emission spectra of PiG. To investigate the mechanism of phosphor and matrix glass mixing ratio on optical performance of PiG-LED, the G/R PiG plate was utilized to encapsulate GaN LED chips and its optoelectronic performance was examined. Excited by current of 350 mA, G/R PiG-LED emits 6506 K correlated color temperature (CCT) white light when G/R ratio is 9:1, color rendering index as high of 90.4 when G/R ratio is 13:1.