Low-loss high-speed switching devices, 2300-V 150-A static induction thyristor

Abstract

Focussing attention to the performance of high-speed high off-state voltage and large current provided in the buried-gate-type static induction (SI) thyristor, a 2300-V 150-A low-voltage-drop high-speed medium-power SI thyristor was developed. Irrespective of the magnitude of switching current, the SI thyristor has the characteristics of fast turn-on time and less on-gate current compared to that of the GTO thyristor. The characteristics of this SI thyristor obtained as the result of manufacturing this prototype were such that the forward blocking voltage was 2300 V at a gate reverse voltage of -5 V, the reverse blocking voltage was 2350 V, and the forward voltage drop was 1.4 V at an anode current of 150 A and 2.2 V at an anode current of 450 A. The switching characteristics were such that the turn-on time was 1.5 µs when an anode current I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</inf> of 150 A becomes ON, turnoff time was 2.5 µs at I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</inf> = 100 A and 3.6 µs at I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</inf> = 200 A. This SI thyristor is able to break the anode current of 1000 A at a gate current of 95 A. Performance exceeding 1100 A/µs was confirmed for the di/dt capability and even for dv/dt, and these normally can be operatable even at 100 times higher current compared with maximum average current.