Low Loss Enabled Semi-superjunction 4H-SiC IGBT for High Voltage and Current Application

Abstract

AbstractIn this article, the new collector side Semi-Superjunction (Semi-SJ) concept has been explored for the first time in 4H-SiC insulated gate bipolar transistors (IGBT). The additional x-directional electric field component, which was not present in the conventional structure has been incorporated at the collector side of the proposed structure by formation of Semi-SJ region. The stacking of n and p-pillar creates the Semi-SJ region at the bottom side of the 4H-SiC IGBT. The two dimensional electric field component, i.e. \(E_X\) and \(E_Y\) increases the overall electric field component in the proposed structure, and offers high breakdown voltage (BV) as compared to the conventional 4H-SiC IGBT. The proposed design offers 11% improvement in BV as compared to conventional one with supporting ability of about more than 15kV. The Semi-SJ section also supports the high doping concentration resulting huge rise in current handling ability. Furthermore, the Semi-SJ region also provides the charge coupling effect, which pulls down the mobile charge carriers from the drift region. This effect reduces the tail current by minimizing turn-off time and reduces the turn-off loss significantly. The proposed device offers 25% reduction in turn-off time in comparison with conventional design.KeywordsIGBT4H-SiCEnergy lossBreakdown voltageOn-state voltage