Abstract
A ultrahigh voltage p-channel 4H-SiC (Silicon Carbide) IGBT (Insulated Gate Bipolar Transistor) with CSL (Current Spreading Layer) structure is designed and optimized. The static and dynamic characteristics of the IGBT is improved by adjusting the CSL doping concentration $N_{CSL}$, the CSL thickness $D_{CSL}$ and the width of JFET region $L_{JFET}$. Through numerical simulations, when $N_{CSL}$ is (1×10)$^{16}$ cm$^{-3}$, $D_{CSL}$ is 1.5$\mu$ m and $L_{JFET}$ is 3$\mu$ m, the blocking voltage can reach 15.6kV, and the maximum of gate oxide field $E_{OX,max}$ is less than 3MV/cm. When the on-state current is 10A, the on-state voltage is only 8.2V. The turn-on time is about 120ns and the turn-off time is about 440ns at 5kV dc-link voltage.
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