Abstract
We report on the first AlInN/GaN Heterojunction Field Effect Transistor (HFET) based Monolithic Microwave Integrated Circuit (MMIC) switch. Lattice-matched AlInN/GaN heterostructures with indium contents of ∼17% exhibit a very large conduction band discontinuity, ΔE C , of 1.7 eV. This large discontinuity results in 2DEG densities as high as 4.7×1013 cm−2 [1] and electron mobilities as high as 1617 cm2/V-s [2]. As a result these heterostructures can achieve record low sheet resistances, making them very attractive candidates for ultra-low loss microwave and other switching devices.
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