Abstract
A monolithic microwave integrated circuit (MMIC) switch chip is developed using the InGaAs/GaAs p-HEMT process for the switch matrix of a satellite communication system. An absorptive MMIC switch is designed for good reflection-coefficient performances of the input and output ports at both on- and off-states. A quarter-wavelength impedance transformer is realized with the lumped elements of an MIM capacitor and a spiral inductor at 3 GHz band in order to reduce the chip size. The MMIC switch covers the frequency range 3.2–3.6 GHz. According to the on-wafer measurement, the fabricated MMIC switch with a miniature size of 1.6 × 1.3 mm demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the measured performance agrees well with the simulation results. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 369–371, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20989
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