Abstract
Abstract For IoT applications, a new SRAM cell with differential write and single-ended read ability is proposed in this paper. The transmission gate is used as an access transistor to get rail to the rail voltage swing and improved stability. Analysis of leakage power and stability for proposed SRAM cell at supply voltage ranging from 0.9V to 0.5V is compared with the existing 5T and 6T SRAM bit cells at 32nm technology. The transistor stacking effect is used to minimize the leakage current of the SRAM cell. The stability increase is accomplished by isolating read line from the node that causes read disturbance problem. The proposed memory cell shows 436x and 1.15x improvement in read power in comparison to 6T and 5T cell, respectively at 0.8V supply voltage. Stability is also improved by 1.15x and 1.12x at 0.8V of supply voltage.
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