Low leakage current technology in P+N silicon photodiode detector

Abstract

Several applications of short wavelengths imaging detectors require low cost, large area, high energy resolution. The large area PIN photodiodes are fabricated for low noise amplifiers with as low as 1fA/cm2. Usually, the PIN diodes require high quality insulator without any defects and oxide charges [1]. In this work, we were able to reduce the leakage currents as low as 1nA/cm2 with various fabrication technologies mentioned below. The aim of this work was to fabricate silicon photodiode detector for specific wavelengths (λ=300~400nm). These devices are designed with relatively large active areas (~ 4cm2) for high voltage application while maintaining a low reverse leakage current density (~ 1nA/cm2). The low leakage currents are achieved by high temperature gettering process, shallow depth implantation, and floating guard ring structures.